研究技术系列和博士后招募!Position available in PENG lab!

研究成果“首例外延高k 栅介质集成型二维鳍式晶体管”入选2023年度“中国半导体十大研究进展”

课题组实现了世界首例二维半导体鳍片/高κ栅氧化物异质结阵列的外延生长及其三维架构的异质集成,并研制了高性能二维鳍式场效应晶体管(2D FinFET)。该原创性工作突破了后摩尔时代高速低功耗芯片的二维半导体/高κ栅介质精准合成与新架构三维异质集成瓶颈,为开发未来先进芯片技术带来新机遇。相关研究成果以“2D fin field-effect transistors integrated with epitaxial high-κ gate oxide”为题,发表于《自然》杂志(Nature 2023, 616, 66-72),入选2023年度中国半导体十大科学进展。

2D fin field-effect transistors integrated with epitaxial high-κ gate oxide

The Peng group achieved the wafer-scale synthesis of 2D semiconductor fin/high-k gate oxide heterostructure array, and fabricated the high-performance 2D FinFET, which was pubuliched on Nature entitled as "2D fin field-effect transistors integrated with epitaxial high-κ gate oxide" (Nature 2023, 616, 66). The as-fabricated 2D fin/oxide heterostructure has ultra-flat interface and ultra-thin fin thickness down to 1unit cell (1.2 nm), which was compatible to wafer-scale high-density and site-specific synthesis. The as-fabricated 2D fin field-effect transistors (FinFETs) based on Bi2O2Se/Bi2SeO5 epitaxial heterostructures exhibit high electron mobility (μ) up to 270 cm2 V-1 s-1, ultra-low off-state current (IOFF) down to ~1 pA μm-1, high on/off current ratios (ION/IOFF) up to 108, and high on-state current (ION) up to 830 μA μm-1 at 400-nm channel length, which meet the low-power specifications projected by the International Roadmap for Devices and Systems (IRDS)4. The 2D fin-oxide epitaxial heterostructures open up new avenues for the further extension of the Moore's law.

https://www.nature.com/articles/s41586-023-05797-z

 

2D semiconducting Bi2O2Se with ultrahigh mobility

The Peng research group realized the controlled syntheses of high-mobility semiconducting 2D crystals--- layered bismuth oxychalcogenides (BOX, Bi2O2X: X = S, Se, Te), and are vigorously exploring their vistas in electronics and optoelectronics. (Jinxiong Wu, et al. High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se. Nature Nanotechnology 2017, 12, 530

https://www.nature.com/articles/nnano.2017.43

 

A native oxide high-κ gate dielectric for two-dimensional electronics

Silicon-based transistors are approaching their physical limits and thus new high-mobility semiconductors are sought to replace silicon in the microelectronics industry. Both bulk materials (such as silicon-germanium and III–V semiconductors) and low-dimensional nanomaterials (such as one-dimensional carbon nanotubes and two-dimensional transition metal dichalcogenides) have been explored, but, unlike silicon, which uses silicon dioxide (SiO2) as its gate dielectric, these materials suffer from the absence of a high-quality native oxide as a dielectric counterpart. This can lead to compatibility problems in practical devices. Here, we show that an atomically thin gate dielectric of bismuth selenite (Bi2SeO5) can be conformally formed via layer-by-layer oxidization of an underlying high-mobility two-dimensional semiconductor, Bi2O2Se. Using this native oxide dielectric, high-performance Bi2O2Se field-effect transistors can be created, as well as inverter circuits that exhibit a large voltage gain (as high as 150). The high dielectric constant (~21) of Bi2SeO5 allows its equivalent oxide thickness to be reduced to 0.9 nm while maintaining a gate leakage lower than thermal SiO2. The Bi2SeO5 can also be selectively etched away by a wet chemical method that leaves the mobility of the underlying Bi2O2Se semiconductor almost unchanged. Nature Electronics 20203, 473.

https://www.nature.com/articles/s41928-020-0444-6

Single-crystalline van der Waals layered dielectric with high dielectric constant

The Peng group and collaborators have proposed a facile synthesis of a single-crystalline high-κ (κ of roughly 16.5) van der Waals layered dielectric Bi2SeO5. The centimetre-scale single crystal of Bi2SeO5 can be efciently exfoliated to an atomically fat nanosheet as large as 250 × 200 μm2 and as thin as monolayer .In 2D Bi2O2Se encapsulated by as-prepared  Bi2SeO5 nanosheets, the quantum Hall efect is observed and the carrier mobility reaches 470,000 cm2 V−1 s−1 at 1.8 K. This work expands the realm of dielectric and opens up a new possibility for lowering the gate voltage and power consumption in 2D electronics and integrated circuits. (Nature Metarials, 2023 in press.

 https://www.nature.com/articles/s41563-023-01502-7

 

Momentum-matching and band-alignment van der Waals heterostructures for high-efficiency infrared photodetection

The Peng group and collaborators have proposed the Momentum-matching and band-alignment van der Waals heterostructures for high-efficiency infrared photodetection.  Based on strain-free high-quality Bi2O2Se crystal synthesized by chemical vapor deposition method, the as-prepared Bi2O2Se/BP photoelectric detector exhibited record-high quantum effiency of 84 % and 76.5 % at 1.3 μm and μm respectively. (Science Advances 2022, 8, eabq1781)

https://www.science.org/doi/10.1126/sciadv.abq1781

 

A single-crystalline native dielectric for two-dimensional semiconductors with an equivalent oxide thickness below 0.5 nm

The Peng research group has established  UV-assisted O3 intercalative oxidation for 2D Bi2O2Se to prepare single-crystalline high-k dielectric β-Bi2SeO5 . This methods is compatible to ultra-violet lithograohy to achieve wafer-scale selected-area oxidation, and the as-prepared  Bi2O2Se-Bi2SeO5 was proven atomically flat and lattice matching. The  high-k dielectric β-Bi2SeO5 acts a relatively low leakage current,  meeting the 2021 IRDS requirements of sub-0.5-nm-EOT dielectric and low-power limit. (Nature Electronics 2022, 5, 643). 

https://www.nature.com/articles/s41928-022-00824-9

 

Uniform thin ice on ultraflat graphene for high-resolution cryo-EM

The Peng research group and collaborators have reported novel ultra-flat graphene grids for cyro-EM, achieveing the preparation of uniform thin ice in high-resolution cyro-EM. This paper has proven that as-prepared uniform thin ice can improve the quality and effiency of cyro-EM, which is compatible for the structural analysis of varies of small protein. 

(Nature Methods 2022, online, doi.org/10.1038/s41592-022-01693-y)

https://www.nature.com/articles/s41592-022-01693-y

 

The unique structure and properties of two-dimensional (2D) materials have a large impact on fundamental researches as well as applications covering electronics, photonics, optoelectronics and energy science. The Peng research group is interested in nanomaterials science and engineering towards the better performance of nanoelectronics, quantum devices, photodetectors, and batteries. Currently, our research interests are focused on the controlled growth, chemical modifications, heterostructures and functional devices of high-mobility 2D materials, such as graphene, topological insulator, layered chalcogenides and oxychalcogenides.


News

  • Congratulations to Dr. Tan Congwei for winning the top-notch young talent support from the Organization Department of the Central Committee of the CPC - Ten Thousand Talents Program

    February 03, 2021

  • Congratulations to PhD. student Junchuan Tang for being approved for the first National Natural Science Foundation of China Young Students Basic Research Project (PhD Candidate)

    May 08, 2024

  • Congratulations to Dr. Yu Mengshi from our research group for winning the Peking University Person of the Year and the Peking University "May Fourth Medal"

    May 04, 2024

  • Congratulations to the research team for their research achievement "2D FinFET integrated by high-k dielectric" was selected as one of the "Top Ten Research Advances in Chinese Semiconductors" in 2023

    February 05, 2024

  • Our research work " Uniform thin ice on ultraflat graphene for high-resolution cryo-EM" has been published in Nature Methods.

    December 01, 2022

  • Our research work " A single-crystalline native dielectric for two-dimensional semiconductors with an equivalent oxide thickness below 0.5 nm" has been published in Nature Electronics.

    November 01, 2022

  • We are happy to have undergraduates Jiahao Wang (Lanzhou University) join the Peng lab!

    September 01, 2022

  • We are happy to have undergraduates Tingkai Feng (ShanghaiTech University) join the Peng lab!

    September 01, 2022

  • We are happy to have undergraduates Weiyu Sun (University of Science and Technology of China) join the Peng lab!

    September 01, 2022

  • Our research work "2D fin field-effect transistors integrated with epitaxial high-κ gate oxide" has been pubilished on Nature. 

    https://www.nature.com/articles/s41586-023-05797-z

    March 23, 2023

  • Congratulations to Liming Zheng, Congcong Zhang and Xiaoting Liu for obtaining doctoral degree!

    June 04, 2022

  • We are happy to have Dr. Hongtao Liu join the Peng lab as Associate Professor! Dr. Liu obtained his Ph.D. at Institute of Chemistry Chinese Academy of Sciences, and completed postdoc fellows at Institute of Physics Chinese Academy of Sciences (2016-2019) and The Hong Kong University of Science and Technology (2019-2021).

    March 31, 2022

  • Congratulations to Liming Zheng for winning the special prize of the 29th "Challenge Cup" May Fourth Youth Science Award of Peking University!

    May 18, 2021

Selected Publications

  • Congwei Tan#, Mengshi Yu#, Junchuan Tang#, Xiaoyin Gao#, Yuling Yin, Yichi Zhang, Jingyue Wang, Xinyu Gao, Congcong Zhang, Xuehan Zhou, Liming Zheng, Hongtao Liu, Kaili Jiang, Feng Ding, Hailin Peng*. 2D fin field-effect transistors integrated with epitaxial high-k gate oxide. Nature 2023, in press.

     

  • Yichi Zhang, Jia Yu, Ruixue Zhu, Mengdi Wang, Congwei Tan, Teng Tu, Xuehan Zhou, Congcong Zhang, Mengshi Yu, Xiaoyin Gao, Yufei Wang, Hongtao Liu, Peng Gao, Keji Lai, Hailin Peng*A single-crystalline native dielectric for two-dimensional semiconductors with an equivalent oxide thickness below 0.5 nm. Nature Electronics 2022, 5, 643.

  • Liming Zheng#, Nan Liu#*, Xiaoyin Gao#, Wenqing Zhu#, Rui Yan, Jincan Zhang, Xin Gao, Yating Yao, Bing Deng, Jie Xu, Ye Lu, Xiaoding Wei*, Hong-Wei Wang*, Hailin Peng*. Uniform thin ice on ultraflat graphene for high-resolution cryo-EM. Nature Methods 2022, online, doi.org/10.1038/s41592-022-01693-y.

  • Yunfeng Chen#, Congwei Tan#, Zhen Wang#, Jinshui Miao*, Xun Ge, Tiange Zhao, Kecai Liao, Haonan Ge, Yang Wang, Fang Wang, Yi Zhou, Peng Wang, Xiaohao Zhou, Chongxin Shan, Hailin Peng*, Weida Hu*. Momentum-matching and band-alignment van der Waals heterostructures for high-efficiency infrared photodetection. Science Adv. 20228, eabq1781

  • Xin Gao#, Liming Zheng#, Fang Luo#, Jun Qian#, Jingyue Wang, Mingzhi Yan, Wendong Wang, Qinci Wu, Junchuan Tang, Yisen Cao, Congwei Tan, Jilin Tang, Mengjian Zhu*, Yani Wang, Yanglizhi Li, Luzhao Sun, Guanghui Gao, Jianbo Yin, Li Lin, Zhongfan Liu, Shiqiao Qin*, Hailin Peng*Integrated wafer-scale ultra-flat graphene by gradient surface energy modulation. Nature Commun. 2022, 13, 5410.

  • Tianran Li#, Teng Tu#, Yuanwei Sun, Huixia Fu, Jia Yu, Lei Xing, Ziang Wang, Huimin Wang, Rundong Jia, Jinxiong Wu, Congwei Tan, Yan Liang, Yichi Zhang, Congcong Zhang, Yumin Dai, Chenguang Qiu, Ming Li, Ru Huang, Liying Jiao, Keji Lai, Binghai Yan, Peng Gao, Hailin Peng*. A native oxide high-κ gate dielectric for two-dimensional electronics. Nature Electronics 2020, in press. 

  • Liming Zheng#, Yanan Chen#, Ning Li#, Jincan Zhang, Nan Liu, Junjie Liu, Wenhui Dang, Bing Deng, Yanbi Li, Xiaoyin Gao, Congwei Tan, Zi Yang, Shipu Xu, Mingzhan Wang, Hao Yang, Luzhao Sun, Yi Cui, Xiaoding Wei, Peng Gao*, Hong-Wei Wang*, Hailin Peng*. Robust ultraclean atomically thin membranes for atomic-resolution electron microscopy. Nature Communications 2020, 11, 541. 

  • Jianbo Yin#, Zhenjun Tan#, Hao Hong#, Jinxiong Wu#, Hongtao Yuan, Yujing Liu, Cheng Chen, Congwei Tan, Ms. Fengrui Yao, Tianran Li, Yulin Chen, Zhongfan Liu, Kaihui Liu*, Hailin Peng* . Ultrafast and highly-sensitive infrared photodetectors based on two-dimensional oxyselenide crystals. Nature Communications 2018,  9, 3311.

  • Li Lin, Hailin Peng*, Zhongfan Liu*. Synthesis challenges for graphene industry. Nature Materials 2019, 9, 520-524.

  • Jinxiong Wu#, Hongtao Yuan#, Mengmeng Meng, Cheng Chen, Yan Sun, Zhuoyu Chen, Wenhui Dang, Congwei Tan, Yujing Liu, Jianbo Yin, Yubing Zhou, Shaoyun Huang, H. Q. Xu, Yi Cui, Harold Y. Hwang, Zhongfan Liu, Yulin Chen, Binghai Yan, Hailin Peng* . High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se. Nature Nanotechnology 2017, 12, 530–534.