研究技术系列和博士后招募!Position available in PENG lab!

A native oxide high-κ gate dielectric for two-dimensional electronics

Silicon-based transistors are approaching their physical limits and thus new high-mobility semiconductors are sought to replace silicon in the microelectronics industry. Both bulk materials (such as silicon-germanium and III–V semiconductors) and low-dimensional nanomaterials (such as one-dimensional carbon nanotubes and two-dimensional transition metal dichalcogenides) have been explored, but, unlike silicon, which uses silicon dioxide (SiO2) as its gate dielectric, these materials suffer from the absence of a high-quality native oxide as a dielectric counterpart. This can lead to compatibility problems in practical devices. Here, we show that an atomically thin gate dielectric of bismuth selenite (Bi2SeO5) can be conformally formed via layer-by-layer oxidization of an underlying high-mobility two-dimensional semiconductor, Bi2O2Se. Using this native oxide dielectric, high-performance Bi2O2Se field-effect transistors can be created, as well as inverter circuits that exhibit a large voltage gain (as high as 150). The high dielectric constant (~21) of Bi2SeO5 allows its equivalent oxide thickness to be reduced to 0.9 nm while maintaining a gate leakage lower than thermal SiO2. The Bi2SeO5 can also be selectively etched away by a wet chemical method that leaves the mobility of the underlying Bi2O2Se semiconductor almost unchanged. Nature Electronics 2020, in press.

Robust ultraclean atomically thin membranes for atomic-resolution electron microscopy

High-resolution electron microscopy requires robust and noise-free substrates to support the specimens. The peng research group presents a polymer- and transfer-free direct-etching method for scalable fabrication of robust graphene grids with ultraclean surfaces and demonstrate cryo-EM at record high resolution. (Liming Zheng, et al. Robust ultraclean atomically thin membranes for atomic-resolution electron microscopy. Nature Communications 2020, 11, 541.)

Ultrafast and highly-sensitive infrared photodetectors based on two-dimensional oxyselenide crystals

The Peng research group and collaborators have demonstrated high-performing flexible infrared photodetectors based on an air-stable 2D oxyselenide crystals at room temperature. 2D Bi2O2Se devices demonstrate a very high sensitivity of 65 A/W at 1200 nm and an ultrafast photoresponse ~1ps, implying an ultrahigh material-limited photodetection bandwidth up to 500 GHz. (Jianbo Yin, et al. Ultrafast and highly sensitive infrared photodetectors based on two-dimensional oxyselenide crystals. Nature Communications 2018, 9, 3311). 

2D semiconducting Bi2O2Se with ultrahigh mobility

The Peng research group realized the controlled syntheses of high-mobility semiconducting 2D crystals--- layered bismuth oxychalcogenides (BOX, Bi2O2X: X = S, Se, Te), and are vigorously exploring their vistas in electronics and optoelectronics. (Jinxiong Wu, et al. High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se. Nature Nanotechnology 2017, 12, 530)

Ultrafast Growth of Large Single-crystal Graphene

The Peng research group has several innovative contributions to the ultrafast growth of large-area graphene single crystals in a controlled manner and achieved its growth rate with world record (Nature Nanotech. 2016; Adv. Mater. 2017; ACS Nano 2016). 

4-inch wrinkle-free single-crystal graphene wafer

The Peng research group has successfully grown wrinkle-free single-crystal graphene wafer on a 4-inch-sized twin-boundary-free single-crystal Cu(111)/sapphire substrate through interfacial strain engineering (ACS Nano 2017; Small 2018). 

Roll-to-roll CVD mass production of graphene film

The Peng research group has achieved the mass production of graphene film via continuous roll-to-roll chemical vapor deposition and non-destructive lamination transfer process (Nano Lett. 2015; Adv. Mater. 2015; Adv. Mater. 2018). 

Selectively enhanced photocurrent generation in twisted bilayer graphene with van Hove singularity

The Peng research group has demonstrated that twisted bilayer graphene (tBLG) with twist-angle dependent van Hove singularities exhibits strong and peculiar light-matter interactions and selectively enhanced photocurrent generation (Nature Commun. 2016; ACS Nano 2016; Nano Lett. 2015). 

The unique structure and properties of two-dimensional (2D) materials have a large impact on fundamental researches as well as applications covering electronics, photonics, optoelectronics and energy science. The Peng research group is interested in nanomaterials science and engineering towards the better performance of nanoelectronics, quantum devices, photodetectors, and batteries. Currently, our research interests are focused on the controlled growth, chemical modifications, heterostructures and functional devices of high-mobility 2D materials, such as graphene, topological insulator, layered chalcogenides and oxychalcogenides.


News

  • Congratulations to Teng Tu, Tianran Li and Hao Yang for obtaining doctoral degree!

    June 04, 2021

  • Congratulations to Liming Zheng for winning the special prize of the 29th "Challenge Cup" May Fourth Youth Science Award of Peking University!

    May 18, 2021

  • Congratulations to Tianran Li and Teng Tu for being awarded the "Outstanding Graduates of Beijing"!

    May 15, 2021

  • Our research work " Hetero-site nucleation for growing twisted bilayer graphene with a wide range of twist angles " has been published in Nature Communications.

    April 22, 2021

  • 2020 group annual summary seminar was held successfully !

    February 03, 2021

  • Congratulations to Dr. Shipu Xu for winning the Excellent Postdoctoral Award and joining the Songshan Lake Materials Laboratory!

    January 27, 2021

  • We are happy to have undergraduates Yijie Guo (Lanzhou University) and Mengdi Wang(Shandong University) join the Peng lab!

    January 08, 2021

  • Our preview "Quasi-one-dimensional TaSe3: A New Topological Superconductor Candidate." has been published in Matter.

    January 06, 2021

  • Congratulations to Tianran Li for being awarded the 2020 "Peking University Student of the Year"!

    December 31, 2020

  • We are happy to have Dr. Jun Qian join the Peng lab! Jun obtained his Ph.D. in Electronic science and engineering at Nanjing University and was awarded BoYa postdoc fellowship at PKU.

    December 11, 2020

  • We are happy to have Xuzhong Cong join the Peng lab! Xuzhong Cong obtained his bachelor's degree at Nanjing University and is pursuing a PhD in College of Chemistry and Molecular Engineering at Peking University.

    November 05, 2020

  • We are happy to have Yongchao Zhu join the Peng lab for joint training programs! Yongchao Zhu obtained his bachelor's degree and master’s degree at Zhengzhou University and is pursuing a PhD in College of Chemistry and Chemical Engineering at Central South University.

    Octorber 12, 2020

  • Congratulations to Tianran Li for being awarded "The Star of Chemistry"!

    September 22, 2020

Selected Publications

  • Tianran Li#, Teng Tu#, Yuanwei Sun, Huixia Fu, Jia Yu, Lei Xing, Ziang Wang, Huimin Wang, Rundong Jia, Jinxiong Wu, Congwei Tan, Yan Liang, Yichi Zhang, Congcong Zhang, Yumin Dai, Chenguang Qiu, Ming Li, Ru Huang, Liying Jiao, Keji Lai, Binghai Yan, Peng Gao, Hailin Peng*. A native oxide high-κ gate dielectric for two-dimensional electronics. Nature Electronics 2020, in press. (#equally contributed) 

  • Liming Zheng#, Yanan Chen#, Ning Li#, Jincan Zhang, Nan Liu, Junjie Liu, Wenhui Dang, Bing Deng, Yanbi Li, Xiaoyin Gao, Congwei Tan, Zi Yang, Shipu Xu, Mingzhan Wang, Hao Yang, Luzhao Sun, Yi Cui, Xiaoding Wei, Peng Gao*, Hong-Wei Wang*, Hailin Peng*. Robust ultraclean atomically thin membranes for atomic-resolution electron microscopy. Nature Communications 2020, 11, 541. (#equally contributed) 

  • Li Lin, Hailin Peng*, Zhongfan Liu*. Synthesis challenges for graphene industry. Nature Materials 2019, 9, 520-524.

  • Jianbo Yin#, Zhenjun Tan#, Hao Hong#, Jinxiong Wu#, Hongtao Yuan, Yujing Liu, Cheng Chen, Congwei Tan, Ms. Fengrui Yao, Tianran Li, Yulin Chen, Zhongfan Liu, Kaihui Liu*, Hailin Peng* . Ultrafast and highly-sensitive infrared photodetectors based on two-dimensional oxyselenide crystals. Nature Communications 2018,  9, 3311.(#equally contributed).

  • Jinxiong Wu#, Hongtao Yuan#, Mengmeng Meng, Cheng Chen, Yan Sun, Zhuoyu Chen, Wenhui Dang, Congwei Tan, Yujing Liu, Jianbo Yin, Yubing Zhou, Shaoyun Huang, H. Q. Xu, Yi Cui, Harold Y. Hwang, Zhongfan Liu, Yulin Chen, Binghai Yan, Hailin Peng* . High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se. Nature Nanotechnology 2017, 12, 530–534(#equally contributed).

  • Xiaozhi Xu, Zhihong Zhang, Lu Qiu, Jianing Zhuang, Liang Zhang, Huan Wang, Chongnan Liao, Huading Song, Ruixi Qiao, Peng Gao, Zonghai Hu, Lei Liao, Zhimin Liao, Enge Wang, Dapeng Yu, Feng Ding*, Hailin Peng*, Kaihui Liu*. Ultrafast Growth of Large Single-crystal Graphene Assisted by Continuous Oxygen Supply. Nature Nanotechnology 2016, 11, 930.

  • Wenshan Zheng, Tian Xie, Yu Zhou, Y. L. Chen, Wei Jiang, Shuli Zhao, Jinxiong Wu, Yumei Jing, Yue Wu, Guanchu Chen, Yunfan Guo, Jianbo Yin, Shaoyun Huang, H. Q. Xu, Zhongfan Liu, Hailin Peng*. Patterning two-dimensional chalcogenide crystals of Bi2Se3 and In2Se3 and efficient photodetectors. Nature Communications 2015, 6, 6972.

  • Hailin Peng*, Wenhui Dang, Jie Cao, Yulin Chen, Di Wu, Wenshan Zheng, Hui Li, Zhi-Xun Shen, Zhongfan Liu. Topological insulator nanostructures for near-infrared transparent flexible electrodes. Nature Chemistry 2012, 4, 281–286.

  • Hailin Peng, Keji Lai, Desheng Kong, Stefan Meister, Yulin Chen, Xiao-Liang Qi, Shou-Cheng Zhang, Zhi-Xun Shen, Yi Cui*. Aharonov-Bohm Interference in Topological Insulator Nanoribbons. Nature Materials 2010, 9(3), 225.

  • Jianbo Yin, Hailin Peng . Asymmetry allows photocurrent in intrinsic graphene. Nature Nanotechnology 2019, 14, 105−106.