Graphene is a zero band gap semiconductor material (also known as half metal). One of its outstanding advantages is its very high carrier mobility. In order to apply graphene to the next generation of electronics, it is usually necessary to open the band gap in graphene. However, the opening of band gap often leads to the decrease of mobility. Therefore, how to balance the band gap and mobility has become an important issue for graphene. Recently, we have studied the mobility properties of graphene nanoribbons and derived an analytical formula for the intrinsic carrier mobility, which not only explains the results of first-principles calculation, but also predicts the transport polarity reversal caused by strain.

    The work was published in the Journal of Chemical Physics as a cover article:

Jinying Wang, Ruiqi Zhao, Mingmei Yang, Zhongfan Liu*, and Zhirong Liu (2013) Inverse relationship between carrier mobility and band gap in graphene. J. Chem. Phys. 138, 084701/1-5.

Link: Jinying Wang, Ruiqi Zhao, Mingmei Yang, Zhongfan Liu*, and Zhirong Liu*. Inverse relationship between carrier mobility and band gap in graphene. J. Chem. Phys. 138, 084701 (2013).